国家/地区 韩国（21） 美国（10） 世界知识产权组织（6） 中国（4） 日本（2）
IPC部 C（22） B（13） H（12）
A（2）
IPC大类 C01（22） H01（10） B82（9）
B01（6） C23（3） A61（2）
B41（2） C08（2） C09（2）
H05（2）
IPC小类 C01B（22） H01L（8） B01J（6）
B82Y（6） B82B（5） H01B（4）
C23C（3） A61L（2） B41M（2）
C08K（2） H01M（2）
IPC C01B031/02（22）
发明人 KIM S（22）
公开年 2013（8） 2012（6） 2014（3） 2016（2）
申请年 2012（7）  2011（5）  2013（5）  2014（2） 
专利权人 SAMSUNG ELEC.（5） CHEORWON PLA.（3） UNIV SUNGKYU.（3） UNIST ACADIN.（2）
UNIV KYUNGHE.（2） UNIV PUSAN N.（2）

Manufacturing graphene used in field effect transistor, supercapacitor, hydrogen generation or storage, solar cell, photocatalyst and biosensor, comprises forming the graphene by unzipping doped carbon materials by an external stimulus.

KIM S O, LEE H J, LIM J, KIM S

Metal-carbon composite used for e.g. molecular detectors, comprises porous scaffold comprising carbon nanotube(s), graphene and graphene oxide, and metal nanoparticles arranged on scaffold in preset ratio, and has preset density.

WORSLEY M A, SATCHER J, KUCHEYEV S, CHARNVANICHBORIKARN S, COLVIN J, FELTER T, KIM S, MERRILL M, ORME C

Sulfur-carbon nanotube composite used for manufacturing cathode active material for lithium-sulfur battery for battery module, has sulfur-containing graphene layer provided on surface(s) of three-dimensional carbon nanotube aggregate.

KIM S, KIM M S, HWANG E

Graphene structure made by bonding monoatomic material between carbon atom of graphene structure via doping monoatomic material on mono layer graphene structure, useful for producing piezoelectric power generation element.

KANG H L, KEUN Y L, KIM S, SUNG K K

Controlling method of graphene thickness used for e.g. manufacturing semiconductor device, involves ion-implanting carbon atoms in metal, heating carbon atoms-implanted metal, cooling, and growing graphene on metal.

CHOI S H, KIM S, LEE J S

Insulating sheet for electrical device, has hexagonal boron nitride sheet which is arranged on graphene sheet.

KIM S, LEE K, KIM S W, LEE K H

Graphene structure used in transparent electrode for display device or solar cell, comprises graphene doped with dopant, and hydrophobic organic layer on at least one surface of doped graphene.

YOON S, SHIN H, CHOI J, CHOI W, KIM S, LEE Y, CHOI J Y, CHOI W M, KIM S M, LEE Y H, SHIN H J, YOON S M, YOONSUNMI, HEE L

Heat spreader comprises composite sheet in which metal filler material is united, and nano metal-graphene flake in which nano metal particle is crystallized on surface of graphene.

KIM S

Graphene-nanoparticle composite used for laminate for electrochemical device, comprises crystallized nanoparticles including nickel, silicon, titanium, chromium, manganese, iron, cobalt, silver and/or magnesium, on surface of graphene.

KIM S, CHOI S Y, SHIN M S, LEE K H, SON B G, RYU S H

Plasma process apparatus used to process e.g. graphene used in the fabrication of transistor, comprises reactor comprising electrode portions to feed constant high voltage for plasma discharge reaction generated in processing channel.

KIM S, YONG D K, BYUNG G S, SUN Y C, MYOUNG S S, BYUNG H K, KYU H L, MOON W L